Next-generation
vertical GaN
The Future of
Power Electronics
Data Centers
In the shift to HVDC power architectures, Vertical Semiconductor is enabling higher
density, higher efficiency power converters from grid to compute
Grid Infrastructure
From grid to onsite generation, Vertical Semiconductor devices enable a revolutionary shift to more compact and reliable solid state power systems
Powered by breakthrough technology developed at
Massachusetts Institute
of Technology (MIT)
High voltage
scales with
thickness
High current
scales with area
Why GaN
GaN is the clear path forward in solid state power electronics
Higher bandgap
Increased efficiency
Higher frequency
Increased power density
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Scalable voltage
From 40 V - 2.3 kV
Lower Thermal Resistance
Cooler power systems
A new era in GaN
Lateral GaN
Lateral GaN HEMTS
struggle to scale past 700V
Vertical GaN
Vertical brings the superiority of GaN to a scalable platform – ready to tackle applications from from 40 V to >2kV
Breakthrough Manufacturing Approach
Vertical is bringing state-of-the-art vertical GaN technologies to the world on a scalable manufacturing platform, ready to meet the demands of the power systems of the future.
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Vertical is building the foundational power layer for the next era of compute
System Level Benefits
50
%
smaller footprint
GaN’s superior switching frequency allows for more compact designs systems design, unlocking new possibilities in power delivery
30
%
higher efficiency
Compounding benefits of utilizing vertical GaN across data center power
10
%
lower total cost of ownership (TCO)
Reduce CAPEX, OPEX & system complexity
Read our latest press release
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driving innovation
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